In recent years we have begun to see references to “RF” CMOS processes and to “RF” models for those processes. This article will explore what the real meanings of such “RF” designations are, and what ...
It has been long known that complementary metal-oxide semiconductor (CMOS) transistors suffer from a scaling issue. As CMOS field-effect transistors (FETs) get smaller, they become less power ...
Tokyo, Japan -- Feb 4, 2008 -- Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology. Targeting ...
Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...