A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift ...
A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
Variable current will generate inductance, capacitance, and their related properties of inductive and capacitive reactance. Although there's no energy loss that directly results from these properties, ...
The application of terahertz technology in space is frontier for the development of 6G technologies. Terahertz transceiver devices based on gallium arsenide Schottky barrier diodes (GaAs SBDs) have ...