EurekAlert!

Neuromorphic floating-gate memory based on 2D materials

A review paper by scientists at Beijing Institute of Graphic Communication presented  a thorough review of the existing ...
EurekAlert!

Researchers enhance speed and stability of two-dimensional flash memory with metal nanocrystals

(a) The percolation model for gate leakage of metal nanocrystals floating gate memory. (b) Schematic structure diagram of the floating gate memory based on discrete Pt nanocrystals/h-BN/MoS 2 van der ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Semiconductor Engineering

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors

Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...
AZoNano

Utilizing Back-Gate Voltage Biases for 2D Materials

In the realm of electronic devices, particularly in the domain of memory devices, significant research has centered around non-volatile floating gate transistors. These transistors are explored as ...
Business Wire

Samsung Starts Mass Producing Industry’s First 3D Vertical NAND Flash

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first ...