Researchers from Seoul National University and KAIST published “Oxide Semiconductor Gain Cell-Embedded Memory: Materials and Integration Strategies for Next Generation On-Chip Memory”. Abstract “The ...
Dr. Simon Min Sze, a semiconductor physics visionary most notable for his contributions to the invention of the world's first floating-gate metal-oxide-semiconductor field-effect transistor (MOSFET), ...
Superior output and transmission properties are demonstrated in tellurium oxide-based amorphous p-type thin-film transistors (Se:Te = 1:4) processed with an optimal selenium alloying ratio. The ...
Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...
The variety of compositions available gives designers many options to achieve the specific properties they need. Indium tin ...
GlobalFoundries (GF) has expanded its partnership with Japanese chipmaker Renesas to further boost semiconductor manufacturing in the US. According to the companies, Renesas will receive access to ...